Global NAND Flash Market 2017 – Samsung, Micron, Toshiba, SK Hynix

NAND Flash Market

NAND Flash MarketThe report that is written on the titled NAND Flash Market 2017 covers all the aspects of the global market study. This report has an estimation about the NAND Flash Market size in terms of value (US$). The report contains the broad segmentation of the market. The report provides the information about the NAND Flash Market and also forecasts its position in the coming years.

NAND flash also uses floating-gate transistors, but they are connected in a way that resembles a NAND gate: several transistors are connected in series, and the bit line is pulled low only if all the word lines are pulled high (above the transistors’ VT). These groups are then connected via some additional transistors to a NOR-style bit line array in the same way that single transistors are linked in NOR flash.

Compared to NOR flash, replacing single transistors with serial-linked groups adds an extra level of addressing. Whereas NOR flash might address memory by page then word, NAND flash might address it by page, word and bit. Bit-level addressing suits bit-serial applications (such as hard disk emulation), which access only one bit at a time. Execute-in-place applications, on the other hand, require every bit in a word to be accessed simultaneously. This requires word-level addressing. In any case, both bit and word addressing modes are possible with either NOR or NAND flash.

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To read data, first the desired group is selected (in the same way that a single transistor is selected from a NOR array). Next, most of the word lines are pulled up above the VT of a programmed bit, while one of them is pulled up to just over the VT of an erased bit. The series group will conduct (and pull the bit line low) if the selected bit has not been programmed.

Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip. (The ground wires and bit lines are actually much wider than the lines in the diagrams.) In addition, NAND flash is typically permitted to contain a certain number of faults (NOR flash, as is used for a BIOS ROM, is expected to be fault-free). Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistors.

This report provides detailed analysis of worldwide markets for NAND Flash from 2011-2015 and provides extensive market forecasts 2016-2021 by region/country and subsectors. It covers the key technological and market trends in the NAND Flash market and further lays out an analysis of the factors influencing the supply/demand for NAND Flash, and the opportunities/challenges faced by industry participants. It also acts as an essential tool to companies active across the value chain and to the new entrants by enabling them to capitalize the opportunities and develop business strategies.

NAND Flash Market Segment by Manufacturers: Samsung (South Korea), Toshiba (Japan), Micron (USA), SK Hynix (South Korea), among others.

This report offers key statistics on the market status of the NAND Flash Manufacturers and is a valuable source of guidance and direction for companies and individuals interested in the NAND Flash Industry.

To provide information on competitive landscape, this report includes detailed profiles of NAND Flash key players. For each player, product details, capacity, price, cost, Utilization Rate, gross overview and Gross Margin Analysis are given.

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The report studies the industry for (NAND Flash Market) mainly covers 13 Topics acutely display the global NAND Flash Market.

Topic 1, NAND Flash Market Overview, Product Overview, Market Segmentation, Market Dynamics, Limitations, Opportunities and Industry News and Policies by Regions

Topic 2, to describe the Industry Chain Analysis, Upstream Raw Material Suppliers, Major Players, Production Process Analysis and Major Downstream Buyers of NAND Flash Analysis

Topic 3, Value Analysis, Production, Growth Rate and Price Analysis by Type of NAND Flash

Topic 4, Consumption and Market Share by Application and Downstream Market Overview of NAND Flash

Topic 5, Production, Value ((M USD) by Region (2011-2016) of NAND Flash

Topic 6, NAND Flash Production, Consumption, Export and Import by Regions (2011-2016)

Topic 7, NAND Flash Market Status and SWOT Analysis by Regions

Topic 8, Competitive Landscape, Product Introduction, Company Profiles and Market Positioning of NAND Flash

Topic 9, NAND Flash Market Analysis and Forecast by Type and Application

Topic 10, Market Analysis and Forecast by Region of NAND Flash

Topic 11, Topic 12 and Topic 13, To describe NAND Flash New Project Feasibility Analysis, Research Data Source, Suggestions on New Project Investment, Research Finding and Conclusion

Lastly, NAND Flash Market report includes Upstream raw materials, equipment and downstream consumer’s analysis. Additionally, the NAND Flash industry development trends and marketing channels are analysed.